Unlocking the Potential of Ferroelectricity: How a Team of Researchers is Using Transistors to Create Polarity Switchable Devices
A research team has recently made an important breakthrough in the field of transistors, with the creation of a transistor that can be switched between two polarities using ferroelectricity. This new development could have far-reaching implications for the use of transistors in a wide range of applications.
The team, led by Professor Zhiyong Fan, of the Chinese Academy of Sciences, succeeded in creating transistors using a ferroelectric thin film that can be switched between two polarities using an electric field. This breakthrough could potentially lead to the production of faster, more efficient transistors. The team believes that this new type of transistor could be used in applications such as optical switching, data storage, and sensors.
source: Phys.org