In a recent study published in the journal Nature Communications, scientists have discovered a new type of “d-band center” in a two-dimensional material made of selenium and nitrogen. This d-band center is a localized electronic state that can be used to create new nanoelectronic devices. The findings of the study could provide new pathways for the research and development of nanoelectronic devices.

The researchers used a type of scanning tunneling microscope (STM) to study the material and found that the d-band center was composed of a selenium vacancy surrounded by four nitrogen atoms. The d-band center is located in the material’s valence band, which makes it a promising candidate for nanoelectronic applications. The researchers also found that the d-band center is highly sensitive to changes in its environment, such as the application of electric fields, which could be used to control its properties.

The discovery of this new type of d-band center could revolutionize the field of nanoelectronics, as it could provide a new way to create devices with improved performance and lower power consumption. The research team is now working to further understand the properties of the d-band center and how it can be

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source: Phys.org