A new study has revealed the mechanism behind how a thin layer of tin dioxide (SnO2) is able to transport electrons. The research, published in Nature Communications, is the first to provide insight into how this material can be used to create efficient and low-cost thin-film transistors.

The research team, led by Professor Tetsuo Endo at the Graduate School of Engineering at Nagoya University, Japan, used a combination of experiments and simulations to reveal the mechanism behind how SnO2 transports electrons. They found that, in the presence of an electric field, a thin film of SnO2 becomes highly conductive, allowing electrons to be transferred across the film. This is due to the movement of oxygen vacancies in the material, which act as mobile carriers for the electrons.

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source: Phys.org