In a breakthrough discovery, researchers have developed a new material that has the potential to revolutionize a wide range of electronic devices. The material, a combination of gallium, manganese and iron, has been found to exhibit an incredibly high level of magnetoresistance – an electrical property that can be used to measure the strength of a magnetic field. This new material’s magnetoresistance is an astonishing 100 times higher than that of current materials used in electronic devices, which means it could be used to enhance the performance of transistors, sensors, and memory storage devices. This is the first time a material has been found with such a high level of magnetoresistance, and it could lead to a dramatic improvement in the power, speed, and efficiency of a variety of electronic devices.

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source: Phys.org