A team of scientists has developed a new technology to facilitate the optimal production of silicon disulfide, a promising semiconductor material. This technology could revolutionize the production of silicon disulfide, allowing for more efficient and cost-effective production of this material. The team found that by using a combination of chemical vapor deposition and atomic layer deposition, they were able to produce silicon disulfide with high purity and with a greater surface area than other methods. This technology could enable the production of high-performance semiconductor devices with improved performance, efficiency, and reliability.

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source: Phys.org