The world of electronics is on the precipice of a new era—the approach of advanced electronics storage through ferroelectricity. Scientists have just developed a new ferroelectric material that can store information in a much more efficient and stable way than traditional semiconductors. This new material, called hafnium oxide, can store data for a much longer period of time without losing its charge. Additionally, it can switch between two different electrical states much faster than traditional semiconductors, meaning that it can process information much more quickly. This could result in a massive step forward for the electronics industry, as hafnium oxide based memory storage could be used to power faster, more efficient devices.

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source: Phys.org