Thin Antiferroelectric Materials can now be made Ferroelectric
Scientists have just made a groundbreaking discovery of thin antiferroelectric materials that can be used to create ferroelectric memory devices. This new discovery could revolutionize the way we store data, as the thin material is much more efficient than traditionally used materials. With this new material, we could store huge amounts of data in a much smaller space, allowing for faster and more efficient data storage. Additionally, this new material is more durable than other materials, meaning that it can be used in more extreme environments. This new discovery could open the door to many new possibilities in the data storage industry.
source: Phys.org