Fluorescence from silicon carbide centers has been observed for the first time in a study conducted by an international research team. The team of scientists used a combination of spectroscopy and theoretical modeling to show that the centers, known as silicon vacancy defects, emit light when exposed to ultraviolet light. This new discovery could be useful for developing new technologies, such as quantum computing, as well as providing a tool for studying the fundamental properties of matter.

The team’s findings could open up a new field of research for scientists looking to exploit the properties of silicon carbide centers for technological applications. The team’s research has shown that the centers can be used to create a single photon source, which is essential for quantum computing and communications. The team also showed that the centers can be used to create spin qubits, which are the basic building blocks of quantum computers. The findings of this study could pave the way for the development of new technologies based on the properties of silicon carbide centers.

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source: Phys.org