The future of electronics may rely on a novel electrical quantum phenomenon known as the “tunneling magnetoresistance effect” (TMR). This phenomenon, which was first observed in the late 1990s, has now been successfully demonstrated in a new study by researchers at the University of Oxford and ETH Zurich. The team has developed a device that utilizes TMR to detect and control the flow of electrons, paving the way for future electronic applications.

TMR is an electrical effect that occurs when electrons travel between two magnets separated by a thin insulating barrier. In this phenomenon, the magnetic fields of the two magnets interact with the electrons, resulting in an increased resistance to the flow of the electrons - leading to a decrease in the amount of current that can be transferred. This effect has the potential to revolutionize electronics, as it offers a way to precisely control the flow of electrons in a way that is both efficient and reliable.

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source: Phys.org