Today, scientists have made a major breakthrough in understanding the nature of electroresistance. By using a combination of scanning tunneling microscopy and atomically thin layered materials, researchers have been able to observe the barrier tunneling electroresistance effect in action. This effect occurs when a thin barrier is placed between two conducting materials, and the resistance of the material increases depending on the electric field strength. This new discovery could potentially be used to create new types of transistors and memory devices. This could revolutionize the way we use and create electronics and could lead to the development of faster, more efficient technologies.

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source: Phys.org