New research has led to the development of a novel and scalable method for creating ferroelectric field-effect transistors (FeFETs). By using a combination of electron beam lithography and a novel deposition method, researchers have demonstrated the successful fabrication of FeFETs in a scalable manner. This breakthrough could lead to major improvements in the performance of FeFETs, making them viable for a range of applications in electronics, memory storage, and computing.

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source: Phys.org